Hydrostatic pressure dependence of isoelectronic bound excitons in beryllium-doped silicon

被引：0
|
作者：
Kim, S.
Herman, I. P.
Moore, K. L.
Hall, D. G.
机构：
来源：
Physical Review B: Condensed Matter | / 53卷 / 08期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] ISOELECTRONIC BOUND EXCITONS IN IN-DOPED AND TL-DOPED SI - A NOVEL SEMICONDUCTOR DEFECT
    WATKINS, SP
    THEWALT, MLW
    STEINER, T
    PHYSICAL REVIEW B, 1984, 29 (10): : 5727 - 5738
  • [22] Fine structure splitting of isoelectronic bound excitons in nitrogen-doped GaAs
    Kita, Takashi
    Harada, Yukihiro
    Wada, Osamu
    PHYSICAL REVIEW B, 2008, 77 (19):
  • [23] FAR-INFRARED MAGNETOABSORPTION OF BOUND EXCITONS IN BERYLLIUM DOPED GERMANIUM
    NAKATA, H
    OTSUKA, E
    HALLER, EE
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01): : L57 - L59
  • [24] RADIATIVE DECAY OF EXCITONS BOUND TO CHALCOGEN-RELATED ISOELECTRONIC IMPURITY COMPLEXES IN SILICON
    BRADFIELD, PL
    BROWN, TG
    HALL, DG
    PHYSICAL REVIEW B, 1988, 38 (05): : 3533 - 3536
  • [25] DYNAMIC STARK-EFFECT OF BOUND EXCITONS IN GERMANIUM DOPED WITH BERYLLIUM OR ZINC
    NAKATA, H
    OTSUKA, E
    HALLER, EE
    SOLID STATE COMMUNICATIONS, 1991, 80 (06) : 387 - 390
  • [26] BERYLLIUM-DOPED INGAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    KOBAYASHI, T
    KURISHIMA, K
    ISHIBASHI, T
    JOURNAL OF CRYSTAL GROWTH, 1994, 142 (1-2) : 1 - 4
  • [27] THALLIUM-RELATED ISOELECTRONIC BOUND EXCITONS IN SILICON - A BISTABLE DEFECT AT LOW-TEMPERATURES
    CONZELMANN, H
    HANGLEITER, A
    WEBER, J
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1986, 133 (02): : 655 - 668
  • [28] Nitrogen related bound excitons in GaP:N under high hydrostatic pressure
    Gil, B
    Leroux, M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 195 (03): : 485 - 490
  • [29] ABSORPTION DUE TO CREATION OF BOUND EXCITONS IN PHOSPHORUS-DOPED SILICON
    HENRY, MO
    LIGHTOWLERS, EC
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (21): : L601 - L604
  • [30] Hydrostatic pressure dependence of indirect and direct excitons in InGaN/GaN quantum wells
    Staszczak, G.
    Trzeciakowski, W.
    Monroy, E.
    Bercha, A.
    Muziol, I. G.
    Skierbiszewski, C.
    Perlin, P.
    Suski, T.
    PHYSICAL REVIEW B, 2020, 101 (08)
12345