共 50 条
- [41] Line shape of the no-phonon luminescence of excitons bound to phosphorus in carbon-doped silicon PHYSICAL REVIEW B, 1996, 54 (07): : 4409 - 4412
- [42] ON SILICON-DOPED GALLIUM-ARSENIDE UNDER HYDROSTATIC-PRESSURE PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1994, 181 (02): : K45 - K48
- [43] PRESSURE-DEPENDENCE OF BOUND-VACANCY MOTION IN DOPED NACL PHYSICAL REVIEW B, 1974, 10 (08): : 3480 - 3486
- [44] Hydrostatic pressure dependence of negative-donor-ion singlet and singlet-like bound magnetoplasmon transitions in doped GaAs/AlGaAs quantum wells PHYSICA E, 2000, 6 (1-4): : 177 - 181
- [45] PHOTO-LUMINESCENCE IN HEAVILY DOPED GAAS .2. HYDROSTATIC-PRESSURE DEPENDENCE PHYSICAL REVIEW B, 1980, 22 (02): : 894 - 903
- [46] Effect of high hydrostatic pressure on the electrophysical properties of doped silicon crystals and devices based on them Solid State Electron, 3 (693-695):
- [48] TRANSIENT CHARACTERISTICS OF ISOELECTRONIC BOUND EXCITONS AT HOLE-ATTRACTIVE DEFECTS IN SILICON - THE C(0.79 EV), P(0.767 EV), AND H(0.926 EV) LINES PHYSICAL REVIEW B, 1993, 48 (20): : 14973 - 14981
- [49] PHOTOLUMINESCENCE OF EXCITONS BOUND TO THE ISOELECTRONIC HYDROGEN-RELATED DEFECTS B-80(1.1470 EV) AND B-19(1)(1.1431 EV) IN SILICON PHYSICAL REVIEW B, 1995, 51 (08): : 4882 - 4888