THALLIUM-RELATED ISOELECTRONIC BOUND EXCITONS IN SILICON - A BISTABLE DEFECT AT LOW-TEMPERATURES

被引：7

作者：

CONZELMANN, H ^{[1
]}

HANGLEITER, A ^{[1
]}

WEBER, J ^{[1
]}

机构：

[1] UNIV TORONTO,INST PHYS 4,TORONTO M5S 1A1,ONTARIO,CANADA

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1986年 / 133卷 / 02期

关键词：

D O I：

10.1002/pssb.2221330227

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：655 / 668

页数：14

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