THALLIUM-RELATED ISOELECTRONIC BOUND EXCITONS IN SILICON - A BISTABLE DEFECT AT LOW-TEMPERATURES

被引：7
|
作者：
CONZELMANN, H [1 ]
HANGLEITER, A [1 ]
WEBER, J [1 ]
机构：
[1] UNIV TORONTO,INST PHYS 4,TORONTO M5S 1A1,ONTARIO,CANADA
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1986年 / 133卷 / 02期
关键词：
D O I：
10.1002/pssb.2221330227
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：655 / 668
页数：14
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