ALLOWING FOR THE PHENOMENON OF NEGATIVE DIFFERENTIAL CONDUCTIVITY IN A SIMPLE MODEL OF A GALLIUM ARSENIDE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTOR.

被引：0
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作者：
Popov, A.R.
Rizunenko, V.I.
Kopylov, A.F.
机构：
来源：
Radioelectronics and Communications Systems (English translation of Izvestiya Vysshikh Uchebnykh Z | 1987年 / 30卷 / 10期
关键词：
SEMICONDUCTING GALLIUM ARSENIDE - SEMICONDUCTOR DEVICES; SCHOTTKY BARRIER;
D O I：
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摘要：
The authors develop a simple one-dimensional model of a gallium arsenide Schottky-gate field-effect transistor (MESFET), in order to employ it in modeling Schottky field-effect transistors whose volt-ampere characteristics (VAC) exhibit a segment with falling drain current owing to the presence of negative differential conductivity (NDC) in the gallium arsenide. 3 Refs.
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页码：97 / 98
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