Control of nitrogen incorporation in Ga(ln)NAs grown by metalorganic vapor phase epitaxy

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机构：
[1] Derluyn, J.
[2] Moerman, I.
[3] Leys, M.R.
[4] Patriarche, G.
[5] Sek, G.
[6] Kudrawiec, R.
[7] Rudno-Rudziński, W.
[8] Ryczko, K.
[9] Misiewicz, J.
来源：
Derluyn, J. (joff.derluyn@imec.be) | 1600年 / American Institute of Physics Inc.卷 / 94期
关键词：
Metallorganic chemical vapor deposition - Semiconducting gallium compounds - Semiconductor quantum wells - X ray diffraction;
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摘要：
The control of nitrogen incorporation in Ga(In)NAs grown by metalorganic vapor phase epitaxy was studied. A systematic investigation was reported that showed that nitrogen incorporation was actually improved by using a high flow of tertiarybutylarsine (TBA). The link the optical of these quantum wells (QW) to the abruptness of the QWs and the nitrogen content.
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