Characteristics of GaSb and GaInSb layers grown by metalorganic vapor phase epitaxy

被引:0
|
作者
Ehsani, H [1 ]
Bhat, I [1 ]
Hitchcock, C [1 ]
Borrego, J [1 ]
Gutmann, R [1 ]
机构
[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECT & ELECT MFG,DEPT ELECT & COMP SYST ENGN,TROY,NY 12180
关键词
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
引用
收藏
页码:423 / 433
页数:11
相关论文
共 50 条
  • [1] GASB GAINSB QUANTUM WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    HAYWOOD, SK
    CHIDLEY, ETR
    MALLARD, RE
    MASON, NJ
    NICHOLAS, RJ
    WALKER, PJ
    WARBURTON, RJ
    APPLIED PHYSICS LETTERS, 1989, 54 (10) : 922 - 924
  • [2] Structural effects of carbon in GaSb grown by metalorganic vapor phase epitaxy
    Watkins, SP
    Wiersma, RD
    Wang, CX
    Pitts, OJ
    Bolognesi, CR
    JOURNAL OF CRYSTAL GROWTH, 2003, 248 : 274 - 278
  • [3] Substrate effect on CdTe layers grown by metalorganic vapor phase epitaxy
    Sochinskii, NV
    Munoz, V
    Bellani, V
    Vina, L
    Dieguez, E
    Alves, E
    daSilva, MF
    Soares, JC
    Bernardi, S
    APPLIED PHYSICS LETTERS, 1997, 70 (10) : 1314 - 1316
  • [4] Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy
    Ribeiro, MLP
    Yavich, B
    Tribuzy, CVB
    Souza, PL
    BRAZILIAN JOURNAL OF PHYSICS, 2002, 32 (02) : 362 - 365
  • [5] Morphology and defect structures of GaSb islands on GaAs grown by metalorganic vapor phase epitaxy
    Joon-Hyung Kim
    Tae-Yeon Seong
    N. J. Mason
    P. J. Walker
    Journal of Electronic Materials, 1998, 27 : 466 - 471
  • [6] Morphology and defect structures of GaSb islands on GaAs grown by metalorganic vapor phase epitaxy
    Kim, JH
    Seong, TY
    Mason, NJ
    Walker, PJ
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (05) : 466 - 471
  • [7] Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy
    Leszczynski, M.
    Czernecki, R.
    Krukowski, S.
    Krysko, M.
    Targowski, G.
    Prystawko, P.
    Plesiewicz, J.
    Perlin, P.
    Suski, T.
    JOURNAL OF CRYSTAL GROWTH, 2011, 318 (01) : 496 - 499
  • [8] Investigation of anomalous optical characteristics of InGaAsP layers on GaAs substrates grown by metalorganic vapor phase epitaxy
    Ono, Kenichi
    Takemi, Masayoshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (03) : 1484 - 1490
  • [9] Growth characteristics of CdZnTe layers in metalorganic vapor-phase epitaxy
    Yasuda, K
    Araki, N
    Samion, HB
    Miyata, M
    JOURNAL OF CRYSTAL GROWTH, 2000, 214 : 19 - 24
  • [10] GEOMETRY AND INTERFACE STRUCTURE OF ISLAND NUCLEI FOR GASB BUFFER LAYERS GROWN ON (001) GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
    AINDOW, M
    CHENG, TT
    MASON, NJ
    SEONG, TY
    WALKER, PJ
    JOURNAL OF CRYSTAL GROWTH, 1993, 133 (1-2) : 168 - 174