Characteristics of GaSb and GaInSb layers grown by metalorganic vapor phase epitaxy

被引：0
|
作者：
Ehsani, H [1 ]
Bhat, I [1 ]
Hitchcock, C [1 ]
Borrego, J [1 ]
Gutmann, R [1 ]
机构：
[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECT & ELECT MFG,DEPT ELECT & COMP SYST ENGN,TROY,NY 12180
来源：
SECOND NREL CONFERENCE ON THERMOPHOTOVOLTAIC GENERATION OF ELECTRICITY | 1996年 / 358期
关键词：
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
引用
收藏
页码：423 / 433
页数：11
相关论文
共 50 条
  • [21] Electrical characteristics of cadmium doped InAs grown by metalorganic vapor phase epitaxy
    Wagener, V.
    Wagener, M. C.
    Botha, J. R.
    JOURNAL OF APPLIED PHYSICS, 2012, 111 (02)
  • [22] GROWTH-KINETICS OF GASB BY METALORGANIC VAPOR-PHASE EPITAXY
    WEI, GY
    PENG, RW
    JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (02) : 217 - 220
  • [23] Growth characteristics of CdZnTe layers grown by metalorganic vapor phase epitaxy using dimethylzinc, dimethylcadmium, diethyltelluride, and dimethyltelluride as precursors
    Yasuda, K
    Mori, K
    Kubota, Y
    Kojima, K
    Inukai, F
    Asai, Y
    Nimura, T
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (08) : 948 - 953
  • [24] Growth characteristics of CdZnTe layers grown by metalorganic vapor phase epitaxy using dimethylzinc, dimethylcadmium, diethyltelluride, and dimethyltelluride as precursors
    K. Yasuda
    K. Mori
    Y. Kubota
    K. Kojima
    F. Inukai
    Y. Asai
    T. Nimura
    Journal of Electronic Materials, 1998, 27 : 948 - 953
  • [25] TWIN NUCLEATION IN LAYERS OF CDTE ON [III] CDTE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    HAILS, JE
    RUSSELL, GJ
    BRINKMAN, AW
    WOODS, J
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2624 - 2625
  • [26] Postgrowth Annealing of CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy
    Yasuda, K.
    Niraula, M.
    Namba, S.
    Kondo, T.
    Muramatsu, S.
    Yamashita, H.
    Wajima, Y.
    Agata, Y.
    JOURNAL OF ELECTRONIC MATERIALS, 2013, 42 (11) : 3125 - 3128
  • [27] Electrical and optical properties of lodine doped CdZnTe layers grown by metalorganic vapor phase epitaxy
    K. Yasuda
    K. Kojima
    K. Mori
    Y. Kubota
    T. Nimura
    F. Inukai
    Y. Asai
    Journal of Electronic Materials, 1998, 27 : 527 - 531
  • [28] Behavior of hydrogen intentionally introduced by plasma into metalorganic vapor phase epitaxy grown CdTe:As layers
    Pelletier, H
    Theys, B
    Lusson, A
    Cote, D
    Rommeluère, JF
    Jomard, F
    Dolin, C
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (01) : 550 - 554
  • [29] INVESTIGATION OF STRAIN IN METALORGANIC VAPOR-PHASE EPITAXY GROWN ZNTE LAYERS BY OPTICAL METHODS
    LEIDERER, H
    JAHN, G
    SILBERBAUER, M
    KUHN, W
    WAGNER, HP
    LIMMER, W
    GEBHARDT, W
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) : 398 - 404
  • [30] Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
    Bilel, C.
    Fitouri, H.
    Zaied, I.
    Bchetnia, A.
    Rebey, A.
    El Jani, B.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 31 : 100 - 105
12345