Control of nitrogen incorporation in Ga(ln)NAs grown by metalorganic vapor phase epitaxy

被引：0
|
作者：
机构：
[1] Derluyn, J.
[2] Moerman, I.
[3] Leys, M.R.
[4] Patriarche, G.
[5] Sek, G.
[6] Kudrawiec, R.
[7] Rudno-Rudziński, W.
[8] Ryczko, K.
[9] Misiewicz, J.
来源：
Derluyn, J. (joff.derluyn@imec.be) | 1600年 / American Institute of Physics Inc.卷 / 94期
关键词：
Metallorganic chemical vapor deposition - Semiconducting gallium compounds - Semiconductor quantum wells - X ray diffraction;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The control of nitrogen incorporation in Ga(In)NAs grown by metalorganic vapor phase epitaxy was studied. A systematic investigation was reported that showed that nitrogen incorporation was actually improved by using a high flow of tertiarybutylarsine (TBA). The link the optical of these quantum wells (QW) to the abruptness of the QWs and the nitrogen content.
引用
收藏
相关论文
共 50 条
  • [21] Polarity control of GaN thin films grown by metalorganic vapor phase epitaxy
    Collazo, R
    Mita, S
    Schlesser, R
    Sitar, Z
    Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07): : 2117 - 2120
  • [22] Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy
    Feltin, E
    Beaumont, B
    Laügt, M
    de Mierry, P
    Vennéguès, P
    Lahrèche, H
    Leroux, M
    Gibart, P
    APPLIED PHYSICS LETTERS, 2001, 79 (20) : 3230 - 3232
  • [23] Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy
    Rommeluère, JF
    Svob, L
    Jomard, F
    Mimila-Arroyo, J
    Lusson, A
    Sallet, V
    Marfaing, Y
    APPLIED PHYSICS LETTERS, 2003, 83 (02) : 287 - 289
  • [24] OXYGEN INCORPORATION IN ALUMINUM-BASED SEMICONDUCTORS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    SMITH, LM
    RUSHWORTH, SA
    JONES, AC
    ROBERTS, JS
    CHEW, A
    SYKES, DE
    JOURNAL OF CRYSTAL GROWTH, 1993, 134 (1-2) : 140 - 146
  • [25] Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors
    Hiroki, Masanobu
    Oda, Yasuhiro
    Watanabe, Noriyuki
    Maeda, Narihiko
    Yokoyama, Haruki
    Kumakura, Kazuhide
    Yamamoto, Hideki
    JOURNAL OF CRYSTAL GROWTH, 2013, 382 : 36 - 40
  • [26] Influence of Ga source on nitrogen incorporation of Ga(In)AsN/GaAs quantum wells grown by metalorganic chemical vapor deposition
    Cuong, TV
    Cho, HK
    Park, CS
    Park, JY
    Hong, CH
    Suh, FK
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S514 - S517
  • [27] Quantum cascade lasers grown by metalorganic vapor phase epitaxy
    Roberts, JS
    Green, RP
    Wilson, LR
    Zibik, EA
    Revin, DG
    Cockburn, JW
    Airey, RJ
    APPLIED PHYSICS LETTERS, 2003, 82 (24) : 4221 - 4223
  • [28] ELECTRICAL CHARACTERIZATION OF SEMIINSULATING METALORGANIC VAPOR-PHASE EPITAXY GAAS GROWN BY CONTROLLED OXYGEN INCORPORATION
    HUANG, JW
    KUECH, TF
    JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 462 - 467
  • [29] AlGaN/GaN heterostructure grown by metalorganic vapor phase epitaxy
    Qu, JQ
    Li, J
    Zhang, GY
    SOLID STATE COMMUNICATIONS, 1998, 107 (09) : 467 - 470
  • [30] Luminescence Control of Led Heterostructures Grown by Method of Metalorganic Vapor Phase Epitaxy on Sapphire
    Zixuan Li
    V. I. Oleshko
    L. V. Vorobjeva
    Russian Physics Journal, 2023, 65 : 1875 - 1880
12345