MEASUREMENT OF THE MINORITY-CARRIER LIFETIME IN THE HIGH-RESISTANCE LAYERS OF TRANSISTOR STRUCTURES.

被引：0
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作者：
Grigor'yev, B.I.
Rudskiy, V.A.
Togatov, V.V.
机构：
来源：
Radio Engineering and Electronic Physics (English translation of Radiotekhnika i Elektronika) | 1981年 / 26卷 / 07期
关键词：
TRANSISTORS - Nondestructive Examination;
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摘要：
A nondestructive method is proposed for determining the lifetime of minority charge carriers in the high-resistance layers of transistor structures, based on a measurement of the difference in the reverse-current constancy intervals. The results of experimental studies that confirm the reliability of the difference method are presented.
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页码：115 / 121
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