MEASUREMENT OF THE CHARGE MINORITY-CARRIERS LIFE TIME IN THE HIGH-RESISTANCE LAYERS OF TRANSISTOR STRUCTURES

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作者：

GRIGORYEV, BI

RUDSKY, VA

TOGATOV, VV

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来源：

RADIOTEKHNIKA I ELEKTRONIKA | 1981年 / 26卷 / 07期

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TM [电工技术]; TN [电子技术、通信技术];

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0808 ; 0809 ;

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页码：1514 / 1521

页数：8

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[1] MEASUREMENT OF THE MINORITY-CARRIER LIFETIME IN THE HIGH-RESISTANCE LAYERS OF TRANSISTOR STRUCTURES.
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[J]. Radio Engineering and Electronic Physics (English translation of Radiotekhnika i Elektronika), 1981, 26 (07): : 115 - 121
[2] MEASUREMENT OF THE CHARGE MINORITY-CARRIERS LIFE TIME IN THE BASE REGIONS OF DIODE AND THYRISTOR STRUCTURES AT HIGH-CURRENT DENSITIES
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TOGATOV, VV
[J]. RADIOTEKHNIKA I ELEKTRONIKA, 1980, 25 (05): : 1063 - 1071
[3] LIFE TIME MEASUREMENT OF MINORITY-CARRIERS IN PURE SILICON IN WEAK INJECTIONS
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[4] MEASUREMENT OF THE CHARGE MINORITY-CARRIER LIFE TIME IN THE HIGH-RESISTANCE COLLECTOR REGION OF POWER TRANSISTORS
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[J]. RADIOTEKHNIKA I ELEKTRONIKA, 1980, 25 (05): : 1115 - 1116
[5] IMPURITY ENERGY-SPECTRA AND SCATTERING OF CARRIERS OF CHARGE IN HIGH-RESISTANCE GAAS(O)
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[J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1976, (02): : 25 - 26
[6] REVERSE RECOVERY-TIME OF JUNCTION DIODES WITH HIGH CAPTURE RATE OF MINORITY-CARRIERS IN THE LOW INJECTION LEVEL
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (6A): : 1836 - 1837
[7] Conductivity of high-resistance π layers and parameters of iron-doped GaAs diode structures
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[J]. Russian Physics Journal, 1998, 41 (4) : 357 - 360
[8] MENSURATION OF HALL MOBILITY FOR CURRENT CARRIERS OF HIGH-RESISTANCE SEMICONDUCTOR EPITAXY LAYERS BY MEANS OF SOUND METHOD
POLYAKOV, NN
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[J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1970, (06): : 85 - &
[9] UNIVERSAL CHAMBER FOR MEASUREMENT OF X-RAY AND ELECTRIC CHARACTERISTICS OF HIGH-RESISTANCE SEMICONDUCTING LAYERS
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[J]. INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1977, 20 (04) : 1211 - 1213
[10] EXPERIMENTAL INVESTIGATION OF EXCESS CHARGE AND TIME CONSTANT OF MINORITY-CARRIERS IN THIN DIFFUSED LAYER OF 0.1 OHM-CM SILICON SOLAR-CELLS
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (03) : 373 - 382