Effects of active hydrogen on atomic layer epitaxy of GaAs

被引：0
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作者：
Meguro, T. [1 ]
Isshiki, H. [1 ]
Lee, J.-S. [1 ]
Iwai, S. [1 ]
Aoyagi, Y. [1 ]
机构：
[1] Inst of Physical and Chemical, Research (RIKEN), Saitama, Japan
来源：
Applied Surface Science | 1997年 / 112卷
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页码：118 / 121
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