Effects of active hydrogen on atomic layer epitaxy of GaAs

被引：0

作者：

Meguro, T. ^{[1
]}

Isshiki, H. ^{[1
]}

Lee, J.-S. ^{[1
]}

Iwai, S. ^{[1
]}

Aoyagi, Y. ^{[1
]}

机构：

[1] Inst of Physical and Chemical, Research (RIKEN), Saitama, Japan

来源：

Applied Surface Science | 1997年 / 112卷

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：118 / 121

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