Atomic layer epitaxy of GaAs using GaBr and GaI sources

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作者：
Taki, Tetsuya [1 ]
Koukitu, Akinori [1 ]
机构：
[1] Tokyo Univ of Agriculture and, Technology, Tokyo, Japan
来源：
Applied Surface Science | 1997年 / 112卷
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Number:; -; Acronym:; MEXT; Sponsor: Ministry of Education; Culture; Sports; Science and Technology;
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页码：127 / 131
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