NEW DONOR FORMATION IN n-TYPE CZOCHRALSKI-GROWN SILICON.

被引:0
|
作者
Fukuoka, Noboru [1 ]
机构
[1] Naruto Univ of Teacher Education,, Dep of Science, Naruto, Jpn, Naruto Univ of Teacher Education, Dep of Science, Naruto, Jpn
关键词
D O I
暂无
中图分类号
学科分类号
摘要
18
引用
收藏
页码:1450 / 1453
相关论文
共 50 条
  • [11] Thermal donor formation in direct-plasma hydrogenated n-type Czochralski silicon
    Simoen, E.
    Claeys, C.
    Rafi, J. M.
    Ulyashin, A. G.
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 134 (2-3): : 189 - 192
  • [12] A NOVEL MODEL OF NEW DONORS IN CZOCHRALSKI-GROWN SILICON
    QIAN, JJ
    WANG, ZG
    WAN, SK
    LIN, LY
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (03) : 954 - 957
  • [13] INFLUENCE OF CARBON AND OXYGEN ON DONOR FORMATION AT 700-DEGREES-C IN CZOCHRALSKI-GROWN SILICON
    OHSAWA, A
    TAKIZAWA, R
    HONDA, K
    SHIBATOMI, A
    OHKAWA, S
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5733 - 5737
  • [14] INTERSTITIAL STAGE OF FORMATION OF DISORDERED REGIONS IN n-TYPE SILICON.
    Mikhnovich, V.V.
    Titarenko, S.G.
    1600, (18):
  • [15] Czochralski-Grown Silicon Crystals for Microelectronics
    Bukowski, A.
    ACTA PHYSICA POLONICA A, 2013, 124 (02) : 235 - 238
  • [16] New shallow donor centres in high-purity Czochralski-grown silicon single crystals
    Yu, C. H.
    Zhang, B.
    Li, Y. J.
    Lu, W.
    Shen, X. C.
    SOLID STATE COMMUNICATIONS, 2007, 142 (1-2) : 71 - 74
  • [17] Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czochralski-grown silicon
    Vaqueiro-Contreras, M.
    Markevich, V. P.
    Halsall, M. P.
    Peaker, A. R.
    Santos, P.
    Coutinho, J.
    Oberg, S.
    Murin, L. I.
    Falster, R.
    Binns, J.
    Monakhov, E. V.
    Svensson, B. G.
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2017, 11 (08):
  • [18] Stress-induced changes of thermal donor formation in heat-treated Czochralski-grown silicon
    Emtsev, VV
    Andreev, BA
    Davydov, VY
    Poloskin, DS
    Oganesyan, GA
    Kryzhkov, DI
    Shmagin, VB
    Emtsev, VV
    Misiuk, A
    Londos, CA
    PHYSICA B-CONDENSED MATTER, 2003, 340 : 769 - 772
  • [19] DEPTH PROFILE OF THERMAL DONOR IN BORON-DOPED CZOCHRALSKI-GROWN SILICON
    FILANGERI, EM
    NISHIDA, T
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (12) : 7931 - 7934
  • [20] Depth profile of thermal donor in boron-doped Czochralski-grown silicon
    Filangeri, Edward M.
    Nishida, Toshikazu
    1600, American Inst of Physics, Woodbury, NY, USA (75):