DEPTH PROFILE OF THERMAL DONOR IN BORON-DOPED CZOCHRALSKI-GROWN SILICON

被引：3

作者：

FILANGERI, EM ^{[1
]}

NISHIDA, T ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT ELECT ENGN,FLORIDA SOLID STATE ELECTR LAB,GAINESVILLE,FL 32611

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 12期

关键词：

D O I：

10.1063/1.356580

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Near-complete suppression of thermal donor formation is observed at the silicon surface independent of annealing time. Schottky barrier capacitance-voltage profiling of p-type Czochralski silicon following heat treatment at 200-450-degrees-C in N2 indicates thermal donor depletion near the surface consistent with earlier reports. Analysis of the capacitance-voltage method indicates that series resistance effects on the depth profile are negligible. Possible mechanisms for the thermal donor depletion at the silicon surface are discussed.

引用

页码：7931 / 7934

页数：4

共 50 条

[1] Depth profile of thermal donor in boron-doped Czochralski-grown silicon
Filangeri, Edward M.
Nishida, Toshikazu
[J]. 1600, American Inst of Physics, Woodbury, NY, USA (75):
[2] Degradation of boron-doped Czochralski-grown silicon solar cells
Adey, J
Jones, R
Palmer, DW
Briddon, PR
Oberg, S
[J]. PHYSICAL REVIEW LETTERS, 2004, 93 (05) : 055504 - 1
[3] Effect of rapid thermal annealing on recombination centres in boron-doped Czochralski-grown silicon
Walter, D. C.
Lim, B.
Bothe, K.
Voronkov, V. V.
Falster, R.
Schmidt, J.
[J]. APPLIED PHYSICS LETTERS, 2014, 104 (04)
[4] Microstructure of flow pattern defects in boron-doped Czochralski-grown silicon
LIU Caichi 1)
[J]. 工程科学学报, 2006, (08) : 793 - 793
[5] Microstructure of flow pattern defects in boron-doped Czochralski-grown silicon
Liu Caichi
Hao Qiuyan
Zhang Jianfeng
Teng Xiaoyun
Sun Shilong
Qigang Zhou
Wang Jing
Xiao Qinghua
[J]. RARE METALS, 2006, 25 (04) : 389 - 392
[6] Microstructure of flow pattern defects in boron-doped Czochralski-grown silicon
LIU Caichi1)
[J]. Rare Metals, 2006, (04) : 389 - 392
[7] THERMAL DONOR GENERATION IN BORON-DOPED AND ALUMINUM-DOPED CZOCHRALSKI SILICON
KOPALKO, K
KACZOR, P
GODLEWSKI, M
GREGORKIEWICZ, T
[J]. ACTA PHYSICA POLONICA A, 1991, 80 (03) : 345 - 348
[8] Changes in Concentrations of Copper and Nickel on Boron-Doped Czochralski-Grown Silicon Surface at Room Temperature
Takeda, Ryuji
Narita, Masahiro
Tani-ike, Seiji
Yamabe, Kikuo
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (05) : 0512011 - 0512016
[9] OXYGEN PRECIPITATION AND THERMAL DONOR FORMATION IN CZOCHRALSKI-GROWN SILICON DOPED WITH CARBON AND TIN
WIJARANAKULA, W
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) : 2737 - 2739
[10] Degradation of boron-doped czochralski-grown silicon solar cells (vol 93, art no 055504, 2004)
Adey, J
Jones, R
Palmer, DW
Briddon, PR
Oberg, S
[J]. PHYSICAL REVIEW LETTERS, 2004, 93 (16)

← 1 2 3 4 5 →