DEPTH PROFILE OF THERMAL DONOR IN BORON-DOPED CZOCHRALSKI-GROWN SILICON

被引：3
|
作者：
FILANGERI, EM [1 ]
NISHIDA, T [1 ]
机构：
[1] UNIV FLORIDA,DEPT ELECT ENGN,FLORIDA SOLID STATE ELECTR LAB,GAINESVILLE,FL 32611
来源：
JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 12期
关键词：
D O I：
10.1063/1.356580
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Near-complete suppression of thermal donor formation is observed at the silicon surface independent of annealing time. Schottky barrier capacitance-voltage profiling of p-type Czochralski silicon following heat treatment at 200-450-degrees-C in N2 indicates thermal donor depletion near the surface consistent with earlier reports. Analysis of the capacitance-voltage method indicates that series resistance effects on the depth profile are negligible. Possible mechanisms for the thermal donor depletion at the silicon surface are discussed.
引用
收藏
页码：7931 / 7934
页数：4
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