Czochralski-Grown Silicon Crystals for Microelectronics

被引：4
|
作者：
Bukowski, A. [1 ]
机构：
[1] Inst Elect Mat Technol, PL-01919 Warsaw, Poland
来源：
ACTA PHYSICA POLONICA A | 2013年 / 124卷 / 02期
关键词：
D O I：
10.12693/APhysPolA.124.235
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The Czochralski method of crystal growth is used since 1950s in scientific and industrial laboratories for growth of single crystals of large size and high quality. The article presents the general characteristics and selected improvements of the Czochralski method, and discusses its meaning and advantages in growth of silicon single crystals playing a key role in microelectronics.
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页码：235 / 238
页数：4
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