Growth of 3C-SiC layers on Si substrates with a novel stress relaxation structure

被引：0
|
作者：
Irokawa, Y. [1 ]
Kodama, M. [1 ]
Kachi, T. [1 ]
机构：
[1] Toyota Ctrl. Res. Devmt. Lab. Inc., Nagakute, Aichi 480-1192, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 10期
关键词：
Chemical vapor deposition - Crystal structure - Current voltage characteristics - Epitaxial growth - Raman spectroscopy - Semiconducting silicon - Silicon carbide - Stress relaxation;
D O I：
10.1143/jjap.40.5907
中图分类号：
学科分类号：
摘要：
Silicon (Si) substrates having cavities immediately beneath the surface layer were used as a stress relaxation structure in 3C-SiC heteroepitaxial growth on Si substrates. Single crystalline 3C-SiC layers were grown on these Si substrates by means of low pressure chemical vapor deposition (LPCVD). The layers' quality was characterized by micro-Raman spectroscopy and current-voltage (I-V) characteristics. These results revealed that this structure improved the crystal quality in the 3C-SiC layers.
引用
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页码：5907 / 5908
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