Epitaxial growth of AlN on Si substrates with intermediate 3C-SiC as buffer layers

被引：1

作者：

Hong, SQ ^{[1
]}

Liaw, HM ^{[1
]}

Linthicum, K ^{[1
]}

Davis, RF ^{[1
]}

Fejes, P ^{[1
]}

Zollner, S ^{[1
]}

Kottke, M ^{[1
]}

Wilson, SR ^{[1
]}

机构：

[1] Motorola Inc, Semicond Prod Sector, Tempe, AZ 85282 USA

来源：

WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999 | 1999年 / 572卷

关键词：

D O I：

10.1557/PROC-572-407

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single crystalline AlN was successfully grown on a 3C-SiC coated Si (111) substrate by organometallic vapor phase epitaxy. The 3C-SiC film was obtained via the conversion of the Si near-surface region to SiC using gas-source molecular beam epitaxy. The quality of the AlN was mainly controlled by that of the SiC. The effects of Si pits and SiC hillocks formed during the conversion on subsequent AIN growth are discussed. Process optimization is suggested to improve the SiC buffer layer for subsequent AlN deposition.

引用

页码：407 / 412

页数：6

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