Low-frequency noise in polycrystalline semiconducting FeSi2 thin films

被引：0
|
作者：
Tassis, D.H. [1 ]
Dimitriadis, C.A. [1 ]
Brini, J. [2 ]
Kamarinos, G. [2 ]
Birbas, A. [3 ]
机构：
[1] Department of Physics, University of Thessaloniki, 54006 Thessaloniki, Greece
[2] LPCS, ENSERG, 23 rue des Martyrs, 38016 Grenoble Cedex, France
[3] Dept. Elec. Eng. and Comp. Technol., Applied Electronics Laboratory, University of Patras, Patras, Greece
来源：
Journal of Applied Physics | 1999年 / 85卷 / 8 I期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：4091 / 4095
相关论文
共 50 条
  • [31] Manipulations of thermal emission by β-FeSi2 thin films and nanostructures
    Kaneko, Yasuyuki
    Suzuki, Motofumi
    Nakajima, Kaoru
    Kimura, Kenji
    NANOSTRUCTURED THIN FILMS V, 2012, 8465
  • [32] ON THE ORIGIN OF LOW-FREQUENCY NOISE IN HTCS THIN-FILMS
    JUNG, G
    BONALDI, M
    VITALE, S
    KONOPKA, J
    PHYSICA C, 1991, 180 (1-4): : 276 - 279
  • [33] Electrical properties of β-FeSi2 thin films on insulating substrates
    Akiyama, K
    Kimura, T
    Nishiyama, S
    Hattori, T
    Ohashi, N
    Funakubo, H
    CRITICAL INTERFACIAL ISSUES IN THIN-FILM OPTOELECTRONIC AND ENERGY CONVERSION DEVICES, 2004, 796 : 121 - +
  • [34] Low-frequency noise spectroscopy of polycrystalline silicon thin-film transistors
    Angelis, CT
    Dimitriadis, CA
    Brini, J
    Kamarinos, G
    Gueorguiev, VK
    Ivanov, TE
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (05) : 968 - 974
  • [35] Origin of low-frequency noise in polycrystalline silicon thin-film transistors
    Dimitriadis, CA
    Farmakis, FV
    Kamarinos, G
    Brini, J
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (12) : 9919 - 9923
  • [36] OPTICAL-ABSORPTION STUDY OF ION-BEAM SYNTHESIZED POLYCRYSTALLINE SEMICONDUCTING FESI2
    YANG, Z
    HOMEWOOD, KP
    FINNEY, MS
    HARRY, MA
    REESON, KJ
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) : 1958 - 1963
  • [37] Investigation of the low-frequency electrical noise in grain boundaries and polycrystalline silicon films
    Tkachenko, NN
    Kolomoets, GP
    Stroiteleva, NI
    POLYCRYSTALLINE SEMICONDUCTORS IV - PHYSICS, CHEMISTRY AND TECHNOLOGY, 1996, 51-5 : 397 - 402
  • [38] PHONON-DRAG EFFECT OF ULTRA-THIN FeSi2 AND MnSi1.7/FeSi2 FILMS
    Hou, Q. R.
    Gu, B. F.
    Chen, Y. B.
    He, Y. J.
    MODERN PHYSICS LETTERS B, 2011, 25 (22): : 1829 - 1838
  • [39] Synthesis and properties of semiconducting iron disilicide β-FeSi2
    Kakemoto, H
    Makita, Y
    Sakuragi, S
    Tsukamoto, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9A): : 5192 - 5199
  • [40] Synthesis and properties of semiconducting iron disilicide β-FeSi2
    Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
    不详
    不详
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 9 A (5192-5199):
12345