Investigation of the low-frequency electrical noise in grain boundaries and polycrystalline silicon films

被引：0
|
作者：
Tkachenko, NN
Kolomoets, GP
Stroiteleva, NI
机构：
来源：
POLYCRYSTALLINE SEMICONDUCTORS IV - PHYSICS, CHEMISTRY AND TECHNOLOGY | 1996年 / 51-5卷
关键词：
grain boundary; thin-film resistors; low-frequency electrical noise; 1/f noise; carrier concentration fluctuations; carrier mobility fluctuations;
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
It was investigated the noise of different-nature polysilicon samples: isolated grain boundaries that were obtained by Czochralski, edge-defined film-fed growth, solid phase joining methods and polysilicon films prepared by low pressure chemical vapor deposition. We established that the level of the noise strongly depended on the polysilicon manufacturing method, doping level and temperature range of investigation.
引用
收藏
页码：397 / 402
页数：6
相关论文
共 50 条
  • [1] Low-Frequency Noise in Bridged-Grain Polycrystalline Silicon Thin-Film Transistors
    Yang, Yuyang
    Zhang, Meng
    Lu, Lei
    Wong, Man
    Kwok, Hoi-Sing
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (04) : 1984 - 1988
  • [2] CURRENT NOISE OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON
    TKACHENKO, NN
    KOLOMOETS, GP
    FEDOTOV, AK
    ILYASHUK, YM
    SNAPIRO, IB
    FIZIKA TVERDOGO TELA, 1991, 33 (05): : 1593 - 1595
  • [3] Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs
    Zhuge, Jing
    Wang, Runsheng
    Huang, Ru
    Tian, Yu
    Zhang, Liangliang
    Kim, Dong-Won
    Park, Donggun
    Wang, Yangyuan
    IEEE ELECTRON DEVICE LETTERS, 2009, 30 (01) : 57 - 60
  • [4] TEM INVESTIGATION OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON
    OEI, YS
    SCHAPINK, FW
    RADELAAR, S
    JOURNAL DE PHYSIQUE, 1982, 43 (NC1): : 21 - 25
  • [5] Low-frequency noise spectroscopy of polycrystalline silicon thin-film transistors
    Angelis, CT
    Dimitriadis, CA
    Brini, J
    Kamarinos, G
    Gueorguiev, VK
    Ivanov, TE
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (05) : 968 - 974
  • [6] Origin of low-frequency noise in polycrystalline silicon thin-film transistors
    Dimitriadis, CA
    Farmakis, FV
    Kamarinos, G
    Brini, J
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (12) : 9919 - 9923
  • [7] Formation of porous grain boundaries in polycrystalline silicon thin films
    Kageyama, Y
    Murase, Y
    Tsuchiya, T
    Funabashi, H
    Sakata, J
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (11) : 9408 - 9413
  • [8] TEMPERATURE-DEPENDENCE OF LOW-FREQUENCY ELECTRICAL NOISE IN SILICON RESISTORS
    JONES, BK
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (03) : 471 - 490
  • [9] Current paths over grain boundaries in polycrystalline silicon films
    Kimura, M
    Inoue, S
    Shimoda, T
    Sameshima, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (2A): : L97 - L99
  • [10] Low-frequency noise in polycrystalline semiconducting FeSi2 thin films
    Tassis, D.H.
    Dimitriadis, C.A.
    Brini, J.
    Kamarinos, G.
    Birbas, A.
    Journal of Applied Physics, 1999, 85 (8 I): : 4091 - 4095
12345