Investigation of the low-frequency electrical noise in grain boundaries and polycrystalline silicon films

被引：0
|
作者：
Tkachenko, NN
Kolomoets, GP
Stroiteleva, NI
机构：
来源：
POLYCRYSTALLINE SEMICONDUCTORS IV - PHYSICS, CHEMISTRY AND TECHNOLOGY | 1996年 / 51-5卷
关键词：
grain boundary; thin-film resistors; low-frequency electrical noise; 1/f noise; carrier concentration fluctuations; carrier mobility fluctuations;
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
It was investigated the noise of different-nature polysilicon samples: isolated grain boundaries that were obtained by Czochralski, edge-defined film-fed growth, solid phase joining methods and polysilicon films prepared by low pressure chemical vapor deposition. We established that the level of the noise strongly depended on the polysilicon manufacturing method, doping level and temperature range of investigation.
引用
收藏
页码：397 / 402
页数：6
相关论文
共 50 条
  • [41] Influence of low-energy ion-beam treatment by hydrogen on electrical activity of grain boundaries in polycrystalline silicon
    Saad, A
    Mazanik, A
    Fedotov, A
    Partyka, J
    Wegierek, P
    Zukowski, P
    VACUUM, 2005, 78 (2-4) : 269 - 272
  • [42] TCAD Simulation of the Influence of Grain Boundaries on the Temperature Dependence of Conductivity in Polycrystalline Silicon Films
    Saburova, Vladislava, I
    Gridchin, Victor A.
    Kamaev, Gennady N.
    Neizvestnyi, Igor G.
    Cherkaev, Alexei S.
    2018 19TH INTERNATIONAL CONFERENCE OF YOUNG SPECIALISTS ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES (EDM 2018), 2018, : 8 - 11
  • [43] Doping dependence of low-frequency noise in polycrystalline SiGe film resistors
    Chen, XY
    Salm, C
    APPLIED PHYSICS LETTERS, 1999, 75 (04) : 516 - 518
  • [44] INVESTIGATION OF LOW-FREQUENCY NOISE OF BIPOLAR-TRANSISTORS
    LUCHININ, AS
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOFIZIKA, 1990, 33 (05): : 624 - 631
  • [45] ANOMALOUS LOW-FREQUENCY GRAIN-BOUNDARY CAPACITANCE IN SILICON
    SEAGER, CH
    PIKE, GE
    APPLIED PHYSICS LETTERS, 1980, 37 (08) : 747 - 749
  • [46] Low-Frequency Electrical Properties of Polycrystalline Saline Ice and Salt Hydrates
    Grimm, Robert E.
    Stillman, David E.
    Dec, Steven F.
    Bullock, Mark A.
    JOURNAL OF PHYSICAL CHEMISTRY B, 2008, 112 (48): : 15382 - 15390
  • [47] Investigation of the dopes segregation at the grains boundaries of polycrystalline silicon films for photovoltaic application
    Silini, S.
    Benhalima, O.
    Hadjoudja, B.
    Chouial, B.
    Chibani, A.
    PROCEEDINGS OF THE JMSM 2008 CONFERENCE, 2009, 2 (03): : 781 - 786
  • [48] Low-frequency noise in gate overlapped lightly doped drain polycrystalline silicon thin-film transistors
    Giovannini, S
    Bove, A
    Valletta, A
    Mariucci, L
    Pecora, A
    Fortunato, G
    APPLIED PHYSICS LETTERS, 2000, 76 (22) : 3268 - 3270
  • [49] Effect of grain boundaries on electrical properties of polycrystalline graphene
    Park, Sanghoon
    Shehzad, Muhammad Arslan
    Khan, Muhammad Farooq
    Nazir, Ghazanfar
    Eom, Jonghwa
    Noh, Hwayong
    Seo, Yongho
    CARBON, 2017, 112 : 142 - 148
  • [50] Probing grain boundaries in As-doped polycrystalline silicon
    Metzner, H
    Seibt, M
    Ziegeler, L
    Uhrmacher, M
    Hahn, T
    HYPERFINE INTERACTIONS, 1999, 120 (1-8): : 383 - 388
12345