Investigation of the low-frequency electrical noise in grain boundaries and polycrystalline silicon films

被引：0
|
作者：
Tkachenko, NN
Kolomoets, GP
Stroiteleva, NI
机构：
来源：
POLYCRYSTALLINE SEMICONDUCTORS IV - PHYSICS, CHEMISTRY AND TECHNOLOGY | 1996年 / 51-5卷
关键词：
grain boundary; thin-film resistors; low-frequency electrical noise; 1/f noise; carrier concentration fluctuations; carrier mobility fluctuations;
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
It was investigated the noise of different-nature polysilicon samples: isolated grain boundaries that were obtained by Czochralski, edge-defined film-fed growth, solid phase joining methods and polysilicon films prepared by low pressure chemical vapor deposition. We established that the level of the noise strongly depended on the polysilicon manufacturing method, doping level and temperature range of investigation.
引用
收藏
页码：397 / 402
页数：6
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