共 50 条
- [41] Structural and electrophysical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well Crystallography Reports, 2015, 60 : 397 - 405
- [42] CRITICAL LAYER THICKNESS OF N-IN0.52AL0.48AS/IN-0.8GA0.2AS/IN0.52AL0.48AS PSEUDOMORPHIC HETEROSTRUCTURES STUDIED BY PHOTOLUMINESCENCE JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (2A): : L162 - L164
- [44] Critical layer thickness on n-In0.52Al0.48As/In0.8Ga0.2As/In0.52Al0.48As pseudomorphic heterostructures studied by photoluminescence Japanese Journal of Applied Physics, Part 2: Letters, 1994, 33 (2 A):
- [45] Negative photoconductivity in In0.52Al0.48As/In0.7Ga0.3As heterostructures PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (05): : 1341 - 1343
- [46] A study of damage induced in In0.52Al0.48As surface by reactive ion etching JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2A): : 533 - 536