Fe and Ti implants in In0.52Al0.48As

被引:0
|
作者
机构
[1] Martin, Jaime M.
[2] Nadella, Ravi K.
[3] Rao, Mulpuri V.
[4] Simons, David S.
[5] Chi, Peter H.
[6] Caneau, C.
来源
Martin, Jaime M. | 1600年 / 22期
关键词
Implantation temperature - Iron implants - Rapid thermal annealing - Room temperature - Rutherford backscattering - Secondary ion mass spectrometry - Titanium implants;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] Structural and electrophysical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well
    G. B. Galiev
    A. L. Vasiliev
    I. S. Vasil’evskii
    R. M. Imamov
    E. A. Klimov
    A. N. Klochkov
    D. V. Lavruhin
    P. P. Maltsev
    S. S. Pushkarev
    I. N. Trunkin
    Crystallography Reports, 2015, 60 : 397 - 405
  • [42] CRITICAL LAYER THICKNESS OF N-IN0.52AL0.48AS/IN-0.8GA0.2AS/IN0.52AL0.48AS PSEUDOMORPHIC HETEROSTRUCTURES STUDIED BY PHOTOLUMINESCENCE
    UENO, Y
    TAGUCHI, T
    MATSUGATANI, K
    TAKEUCHI, Y
    SUGIYAMA, Y
    TACANO, M
    HATTORI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (2A): : L162 - L164
  • [43] OPTICAL WAVE-GUIDES IN IN0.52AL0.48AS GROWN ON INP BY MBE
    RITCHIE, S
    SCOTT, EG
    RODGERS, PM
    ELECTRONICS LETTERS, 1986, 22 (20) : 1066 - 1068
  • [44] Critical layer thickness on n-In0.52Al0.48As/In0.8Ga0.2As/In0.52Al0.48As pseudomorphic heterostructures studied by photoluminescence
    Ueno, Yoshiki
    Taguchi, Takashi
    Matsugatani, Kazuoki
    Takeuchi, Yukihiro
    Sugiyama, Yoshinobu
    Tacano, Munecazu
    Hattori, Tadashi
    Japanese Journal of Applied Physics, Part 2: Letters, 1994, 33 (2 A):
  • [45] Negative photoconductivity in In0.52Al0.48As/In0.7Ga0.3As heterostructures
    Akazaki, Tatsushi
    Yamaguchi, Masumi
    Tsumura, Kouhei
    Nomura, Shintaro
    Takayanagi, Hideaki
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (05): : 1341 - 1343
  • [46] A study of damage induced in In0.52Al0.48As surface by reactive ion etching
    Jiang, GC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2A): : 533 - 536
  • [47] The interfacial features in photoluminescence of In0.52Al0.48As/InP distinguished with selective excitation
    Hu, Xiao
    Zha, Fang-Xing
    Zhan, Jia
    Liu, Bo-Wen
    Gu, Yi
    Shao, Jun
    AIP ADVANCES, 2024, 14 (01)
  • [48] SPUTTER-INDUCED FORMATION OF AN ELECTRON ACCUMULATION LAYER IN IN0.52AL0.48AS
    MASLAR, JE
    BOHN, PW
    AGARWALA, S
    ADESIDA, I
    CANEAU, C
    BHAT, R
    APPLIED PHYSICS LETTERS, 1994, 64 (26) : 3575 - 3577
  • [49] Shubnikov-de Haas effect and persistent photoconductivity in In0.52Al0.48As
    Skuras, E
    Stanley, CR
    Long, AR
    Johnson, EA
    MacKinnon, A
    Yaguchi, H
    van der Burgt, M
    Singleton, J
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) : 6593 - 6595
  • [50] Simulation of ultrasubmicrometer-gate In0.52Al0.48As/In0.75Ga0.25As/In0.52Al0.48As/InP pseudomorphic HEMTs using a full-band Monte Carlo simulator
    Ayubi-Moak, Jason S.
    Ferry, David K.
    Goodnick, Stephen M.
    Akis, Richard
    Saraniti, Marco
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (09) : 2327 - 2338