共 50 条
- [41] Poly(t-BOC-styrene sulfone)-based chemically amplified resists for deep-UV lithography Tarascon, R.G., 1600, (29):
- [42] Optimal temperature-time condition for the post-exposure bake process of deep-UV resists JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (3B): : L259 - L261
- [43] POLY(TERT-BOC-STYRENE SULFONE)-BASED CHEMICALLY AMPLIFIED RESISTS FOR DEEP-UV LITHOGRAPHY POLYMER ENGINEERING AND SCIENCE, 1989, 29 (13): : 850 - 855
- [44] SELF-DEVELOPING POLYSILANE DEEP-UV RESISTS - PHOTOCHEMISTRY, PHOTOPHYSICS, AND SUB-MICRON LITHOGRAPHY PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1985, 539 : 166 - 174
- [45] Silylating reagents with high silicon contents for dry-developed positive-tone resists for extreme-UV (13.5 nm) and deep-UV(248 nm) microlithography IRRADIATION OF POLYMERS: FUNDAMENTALS AND TECHNOLOGICAL APPLICATIONS, 1996, 620 : 399 - 415
- [47] Reaction-diffusion modeling and simulations in positive deep ultraviolet resists JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06): : 2957 - 2962
- [49] NOVEL POSITIVE DEEP-UV RESIST FOR KRF-EXCIMER LASER LITHOGRAPHY POLYMER ENGINEERING AND SCIENCE, 1989, 29 (13): : 859 - 862
- [50] Biobased Epoxy Resin with Inherently Deep-UV Photodegradability for a Positive Photoresist and Anticounterfeiting ACS APPLIED POLYMER MATERIALS, 2023, : 3138 - 3147