NOVEL POSITIVE DEEP-UV RESIST FOR KRF-EXCIMER LASER LITHOGRAPHY

被引:1
|
作者
ENDO, M
TANI, Y
SASAGO, M
OGAWA, K
NOMURA, N
机构
来源
POLYMER ENGINEERING AND SCIENCE | 1989年 / 29卷 / 13期
关键词
D O I
10.1002/pen.760291306
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
引用
收藏
页码:859 / 862
页数:4
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