A NEW POSITIVE RESIST FOR KRF EXCIMER LASER LITHOGRAPHY

被引：0
|
作者：
TANI, Y
ENDO, M
SASAGO, M
OGAWA, K
机构：
来源：
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING VI | 1989年 / 1086卷
关键词：
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：22 / 33
页数：12
相关论文
共 50 条
  • [1] Positive resist for KrF excimer laser lithography
    Park, SJ
    Kim, IH
    Kang, YJ
    Lee, H
    Lee, SH
    Choi, SJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (05): : 2108 - 2112
  • [2] New photobleachable positive resist for KrF excimer laser lithography
    Endo, Masayuki
    Tani, Yoshiyuki
    Sasago, Masaru
    Ogawa, Kazufumi
    Nomura, Noboru
    1600, (27):
  • [3] A NEW PHOTOBLEACHABLE POSITIVE RESIST FOR KRF EXCIMER LASER LITHOGRAPHY
    ENDO, M
    TANI, Y
    SASAGO, M
    OGAWA, K
    NOMURA, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11): : L2219 - L2222
  • [4] A new positive resist based on poly(4-hydroxystyrene) for KrF excimer laser lithography
    Kim, I
    Park, SJ
    Lee, SH
    Kim, ER
    Kim, KC
    Lee, H
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2000, 349 : 179 - 182
  • [5] New positive resist based on poly(4-hydroxystyrene) for KrF excimer laser lithography
    Department of Chemistry, Hanyang University, Seoul 133-791, Korea, Republic of
    不详
    Molecular Crystals and Liquid Crystals Science and Technology Section A: Molecular Crystals and Liquid Crystals, 2000, 349 : 179 - 182
  • [6] POSITIVE AND NEGATIVE CHEMICAL AMPLIFICATION RESIST SYSTEMS FOR KRF EXCIMER LASER LITHOGRAPHY
    HAYASHI, N
    UENO, T
    SHIRAISHI, H
    SCHLEGEL, L
    IWAYANAGI, T
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1991, 201 : 30 - PMSE
  • [7] NEW NEGATIVE DEEP UV RESIST FOR KRF EXCIMER LASER LITHOGRAPHY
    ENDO, M
    TANI, Y
    SASAGO, M
    NOMURA, N
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1989, 197 : 35 - PMSE
  • [8] A NEGATIVE RESIST FOR KRF-EXCIMER LASER LITHOGRAPHY
    TORIUMI, M
    HAYASHI, N
    HASHIMOTO, M
    NONOGAKI, S
    UENO, T
    IWAYANAGI, T
    POLYMER ENGINEERING AND SCIENCE, 1989, 29 (13): : 868 - 873
  • [9] NOVEL POSITIVE DEEP-UV RESIST FOR KRF-EXCIMER LASER LITHOGRAPHY
    ENDO, M
    TANI, Y
    SASAGO, M
    OGAWA, K
    NOMURA, N
    POLYMER ENGINEERING AND SCIENCE, 1989, 29 (13): : 859 - 862
  • [10] APPLICATION OF PHOTOBLEACHABLE POSITIVE RESIST AND CONTRAST ENHANCEMENT MATERIAL TO KRF EXCIMER LASER LITHOGRAPHY
    ENDO, M
    TANI, Y
    SASAGO, M
    NOMURA, N
    DAS, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (11): : 2357 - 2361
12345