APPLICATION OF PHOTOBLEACHABLE POSITIVE RESIST AND CONTRAST ENHANCEMENT MATERIAL TO KRF EXCIMER LASER LITHOGRAPHY

被引：4
|
作者：
ENDO, M [1 ]
TANI, Y [1 ]
SASAGO, M [1 ]
NOMURA, N [1 ]
DAS, S [1 ]
机构：
[1] INTEL CORP,COMPONENTS RES,SANTA CLARA,CA 95052
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 11期
关键词：
D O I：
10.1143/JJAP.28.2357
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2357 / 2361
页数：5
相关论文
共 50 条
  • [1] A NEW PHOTOBLEACHABLE POSITIVE RESIST FOR KRF EXCIMER LASER LITHOGRAPHY
    ENDO, M
    TANI, Y
    SASAGO, M
    OGAWA, K
    NOMURA, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11): : L2219 - L2222
  • [2] Positive resist for KrF excimer laser lithography
    Park, SJ
    Kim, IH
    Kang, YJ
    Lee, H
    Lee, SH
    Choi, SJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (05): : 2108 - 2112
  • [3] A NEW POSITIVE RESIST FOR KRF EXCIMER LASER LITHOGRAPHY
    TANI, Y
    ENDO, M
    SASAGO, M
    OGAWA, K
    [J]. ADVANCES IN RESIST TECHNOLOGY AND PROCESSING VI, 1989, 1086 : 22 - 33
  • [4] Enhancement of process latitude by reducing resist thickness for KrF excimer laser lithography
    Asano, M
    Maruyama, Y
    Koike, T
    Chiba, K
    Shiobara, E
    Ikeda, T
    [J]. ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2, 1998, 3333 : 869 - 879
  • [5] POSITIVE AND NEGATIVE CHEMICAL AMPLIFICATION RESIST SYSTEMS FOR KRF EXCIMER LASER LITHOGRAPHY
    HAYASHI, N
    UENO, T
    SHIRAISHI, H
    SCHLEGEL, L
    IWAYANAGI, T
    [J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1991, 201 : 30 - PMSE
  • [6] A NEGATIVE RESIST FOR KRF-EXCIMER LASER LITHOGRAPHY
    TORIUMI, M
    HAYASHI, N
    HASHIMOTO, M
    NONOGAKI, S
    UENO, T
    IWAYANAGI, T
    [J]. POLYMER ENGINEERING AND SCIENCE, 1989, 29 (13): : 868 - 873
  • [7] NOVEL POSITIVE DEEP-UV RESIST FOR KRF-EXCIMER LASER LITHOGRAPHY
    ENDO, M
    TANI, Y
    SASAGO, M
    OGAWA, K
    NOMURA, N
    [J]. POLYMER ENGINEERING AND SCIENCE, 1989, 29 (13): : 859 - 862
  • [8] APPLICATIONS OF CONTRAST ENHANCEMENT MATERIAL TO PHOTOBLEACHABLE DEEP ULTRAVIOLET RESIST
    ENDO, M
    TANI, Y
    SASAGO, M
    NOMURA, N
    DAS, S
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (05): : 1072 - 1075
  • [9] CHARACTERISTICS OF A MONODISPERSE PHS-BASED POSITIVE RESIST (MDPR) IN KRF EXCIMER LASER LITHOGRAPHY
    KAWAI, Y
    TANAKA, A
    MATSUDA, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (12B): : 4316 - 4320
  • [10] AN ALKALINE-DEVELOPABLE POSITIVE RESIST BASED ON SILYLATED POLYHYDROXYSTYRENE FOR KRF EXCIMER LASER LITHOGRAPHY
    KOBAYASHI, E
    MURATA, M
    YAMACHIKA, M
    KOBAYASHI, Y
    YUMOTO, Y
    MIURA, T
    [J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1992, 203 : 25 - PMSE
12345