Structural analysis of nanocrystalline SiC thin films grown on silicon by ECR plasma CVD

被引：0
|
作者：
Toal, S.J. [1 ]
Reehal, H.S. [1 ]
Webb, S.J. [1 ]
Barradas, N.P. [2 ]
Jeynes, C. [2 ]
机构：
[1] South Bank University, School of Electrical, Electronic and Information Engineering, 103 Borough Rd., London SE1 0AA, United Kingdom
[2] University of Surrey, School of Electronic Engineering, Information Technology and Mathematics, Guildford, GU2 5XH, United Kingdom
来源：
Thin Solid Films | 1999年 / 343卷
关键词：
Number:; -; Acronym:; Sponsor: University of Surrey; NMRC; Sponsor: National Medical Research Council; EC; Sponsor: European Commission;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：292 / 294
相关论文
共 50 条
  • [1] Structural analysis of nanocrystalline SiC thin films grown on silicon by ECR plasma CVD
    Toal, SJ
    Reehal, HS
    Webb, SJ
    Barradas, NP
    Jeynes, C
    THIN SOLID FILMS, 1999, 343 : 292 - 294
  • [2] Growth of microcrystalline β-SiC films on silicon by ECR plasma CVD
    Toal, SJ
    Reehal, HS
    Barradas, NP
    Jeynes, C
    APPLIED SURFACE SCIENCE, 1999, 138 : 424 - 428
  • [3] Low temperature growth of crystalline silicon thin films by ECR plasma CVD
    Wang, LC
    Reehal, HS
    THIN-FILM STRUCTURES FOR PHOTOVOLTAICS, 1998, 485 : 83 - 88
  • [4] Large area microcrystalline silicon films grown by ECR-CVD
    Ferrero, S
    Mandracci, P
    Cicero, G
    Giorgis, F
    Pirri, CF
    Barucca, G
    THIN SOLID FILMS, 2001, 383 (1-2) : 181 - 184
  • [5] The effect of hydrogen incorporation on the performance of nanocrystalline silicon thin film transistors fabricated by microwave ECR plasma CVD
    Teng, LH
    Anderson, WA
    QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 2003, 737 : 469 - 474
  • [6] Nanocrystalline β-SiC films grown by Cat-CVD with precarbonization process
    Li, JC
    Zhao, Q
    Wang, M
    Song, XM
    Wang, H
    Wang, B
    Yan, H
    FRONTIERS OF SOLID STATE CHEMISTRY, 2002, : 411 - 414
  • [7] FTIR analysis of a-SiC:H films grown by plasma enhanced CVD
    Kaneko, Tsutomu
    Nemoto, Dai
    Horiguchi, Atsushi
    Miyakawa, Nobuaki
    JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) : E1097 - E1101
  • [8] Deposition of large area amorphous silicon films by ECR plasma CVD
    Ueda, Y
    Inoue, Y
    Shinohara, S
    Kawai, Y
    VACUUM, 1997, 48 (02) : 119 - 122
  • [9] PROPERTIES OF SILICON OXYNITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD
    HIRAO, T
    SETSUNE, K
    KITAGAWA, M
    KAMADA, T
    OHMURA, T
    WASA, K
    IZUMI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (01): : L21 - L23
  • [10] Thin base-layer single crystal silicon solar cells with ECR plasma CVD grown emitters
    Wang, L
    Reehal, HS
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 34 (16) : 2497 - 2503
12345