Defects produced in silicon by reactive ion etching

被引：0

作者：

Erzgraeber, H.B. ^{[1
]}

Richter, H.H. ^{[1
]}

Aminpur, M.-A. ^{[1
]}

Wolff, A. ^{[1
]}

Blum, K. ^{[1
]}

机构：

[1] Inst for Semiconductor Physics, Frankfurt, Germany

来源：

Diffusion and Defect Data Pt.B: Solid State Phenomena | 1997年 / 57-58卷

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摘要：

引用

页码：371 / 376

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