REACTIVE ION ETCHING OF SILICON DIOXIDE

被引：0

作者：

LIGHT, RW ^{[1
]}

SEE, FC ^{[1
]}

机构：

[1] UNIV NEW MEXICO,DEPT CHEM,ALBUQUERQUE,NM 87131

来源：

ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 1982年 / 184卷 / SEP期

关键词：

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：102 / INOR

共 50 条

[1] REACTIVE ION ETCHING OF SILICON DIOXIDE
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) : 1152 - 1154
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[9] Observation of inverse reactive ion etching lag for silicon dioxide etching in inductively coupled plasmas
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[10] RADIATION-DAMAGE IN SILICON DIOXIDE FILMS EXPOSED TO REACTIVE ION ETCHING
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