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- [2] INSITU MONITORING OF RADIATION-DAMAGE TO THERMAL SILICON DIOXIDE FILMS EXPOSED TO DOWNSTREAM OXYGEN PLASMASJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (05) : 1414 - 1424FLOUNDERS, AWBELL, SAHESS, DW
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- [5] REACTIVE ION ETCHING OF SILICON DIOXIDEJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) : 1152 - 1154LIGHT, RWSEE, FC
- [6] The effect of reactive ion etching on the porosity and charge of silicon dioxide filmsMikroelektronika, 25 (02): : 143 - 145Zamalin, E.Yu.Gridneva, G.N.
- [7] PROCESS INDUCED RADIATION-DAMAGE IN SILICON DIOXIDEJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C398 - C398DIMARIA, DJAITKEN, JMEPHRATH, LM
- [8] Analysis of surface damage induced in silicon substrates by reactive ion etching of silicon dioxideDEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 1998, 160 : 449 - 452Uchida, FMatsui, MKatsuyama, KTokunaga, TKojima, M
- [9] RADIATION-DAMAGE EVALUATION IN EXCIMER LASER-BEAM IRRADIATION AND REACTIVE ION ETCHINGJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (07): : 1111 - 1114SEKINE, MOKANO, HYAMABE, KHAYASAKA, NHORIIKE, Y
- [10] SELECTIVE REACTIVE ION ETCHING OF SILICON DIOXIDESOLID STATE TECHNOLOGY, 1984, 27 (04) : 214 - 219CHANG, JS