RADIATION-DAMAGE IN SILICON DIOXIDE FILMS EXPOSED TO REACTIVE ION ETCHING

被引：63
|
作者：
DIMARIA, DJ
EPHRATH, LM
YOUNG, DR
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 06期
关键词：
D O I：
10.1063/1.326481
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4015 / 4021
页数：7
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