DAMAGE TO THE SILICON LATTICE BY REACTIVE ION ETCHING

被引：20
|
作者：
STRUNK, HP
CERVA, H
MOHR, EG
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 11期
关键词：
D O I：
10.1149/1.2095452
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：2876 / 2880
页数：5
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