Defects produced in silicon by reactive ion etching

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作者：
Erzgraeber, H.B. [1 ]
Richter, H.H. [1 ]
Aminpur, M.-A. [1 ]
Wolff, A. [1 ]
Blum, K. [1 ]
机构：
[1] Inst for Semiconductor Physics, Frankfurt, Germany
来源：
Diffusion and Defect Data Pt.B: Solid State Phenomena | 1997年 / 57-58卷
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页码：371 / 376
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