LOW-TEMPERATURE REACTIVE ION ETCHING OF SILICON

被引：0
|
作者：
TACHI, S [1 ]
TSUJIMOTO, K [1 ]
OKUDAIRA, S [1 ]
机构：
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 11期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C624 / C624
页数：1
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