EFFECT OF NITROGEN INCORPORATION ON THE THERMAL STABILITY OF TiW/Al METALLIZATION.

被引:0
|
作者
Gloesener, D. [1 ]
Puylaert, G. [1 ]
van de Wiele, F. [1 ]
机构
[1] UCL, UCL
来源
Vide, les Couches Minces | 1987年 / 42卷 / 236期
关键词
ALUMINUM AND ALLOYS - Applications - INTEGRATED CIRCUITS; VLSI; -; Metallizing; NITROGEN;
D O I
暂无
中图分类号
学科分类号
摘要
The authors report on a systematic study on the influence of nitrogen incorporation in the TiW layer. Rutherford backscattering spectrometry and Auger electron spectroscopy were interactively used. Complementary measurements were carried out by scanning electron microscopy and X-ray photoelectron spectroscopy.
引用
收藏
页码:175 / 177
相关论文
共 50 条
  • [21] Elastic and plastic strains in Al/TiW/Si contacts during thermal cycles
    Berger, S
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2000, 288 (02): : 164 - 167
  • [22] Improved thermal stability of ultrathin silicon oxynitride layer due to nitrogen incorporation at the interface
    Prabhakaran, K
    Kobayashi, Y
    Ogino, T
    APPLIED SURFACE SCIENCE, 1998, 130 : 182 - 186
  • [23] Improved thermal stability of ultrathin silicon oxynitride layer due to nitrogen incorporation at the interface
    NTT Basic Research Lab, Atsugi-shi, Japan
    Appl Surf Sci, (182-186):
  • [24] Effect of Insertion of a Thin Zr Interlayer on Thermal Stability of ZrN Barrier in Cu Metallization
    Zhai Yannan
    Yang Kun
    Zhang Hui
    Tang Yankun
    Zhang Lili
    RARE METAL MATERIALS AND ENGINEERING, 2014, 43 (08) : 2007 - 2010
  • [25] Effect of Al incorporation in the thermal stability of atomic-layer-deposited HfO2 for gate dielectric applications
    Chiou, Yan-Kai
    Chang, Che-Hao
    Wang, Chen-Chan
    Lee, Kun-Yu
    Wu, Tai-Bor
    Kwo, Raynien
    Hong, Minghwei
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (04) : G99 - G102
  • [26] Thermal stability and failure mechanisms of Au/TiW(N)/Si and Au/TiW(N)/SiO2/Si systems
    Chen, CR
    Chen, LJ
    ADVANCED METALLIZATION FOR FUTURE ULSI, 1996, 427 : 377 - 382
  • [27] THERMAL-STABILITY AND THE FAILURE MECHANISM OF THE AL/W76N24/AU METALLIZATION
    POKELA, PJ
    KOLAWA, E
    RUIZ, R
    REID, JS
    NICOLET, MA
    THIN SOLID FILMS, 1992, 208 (01) : 33 - 37
  • [28] AL-CU-SI/TIW INTERFACE REACTION DUE TO THERMAL TREATMENTS
    MISAWA, Y
    KOIKE, Y
    SURFACE AND INTERFACE ANALYSIS, 1992, 19 (1-12) : 347 - 352
  • [29] EFFECT OF FLUORINE INCORPORATION ON THE THERMAL-STABILITY OF PTSI/SI STRUCTURE
    TSUI, BY
    TSAI, JY
    WU, TS
    CHEN, MC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (01) : 54 - 63
  • [30] THERMAL AND CHEMICAL-STABILITY OF SCHOTTKY METALLIZATION ON GAAS
    LAU, SS
    CHEN, WX
    MARSHALL, ED
    PAI, CS
    TSENG, WF
    KUECH, TF
    APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1298 - 1300