Effect of Al incorporation in the thermal stability of atomic-layer-deposited HfO2 for gate dielectric applications

被引：37
|
作者：
Chiou, Yan-Kai [1 ]
Chang, Che-Hao
Wang, Chen-Chan
Lee, Kun-Yu
Wu, Tai-Bor
Kwo, Raynien
Hong, Minghwei
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan
[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu, Taiwan
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2007年 / 154卷 / 04期
关键词：
D O I：
10.1149/1.2472562
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The thermal stability in structural and electrical properties of HfO2, HfAlOx alloy, and Al2O3/HfO2 stack thin films prepared by atomic layer deposition were comparatively investigated. Both HfAlOx and Al2O3/HfO2 exhibit improved property against thermal degradation compared to the HfO2 film. However, the incorporation of Al in alloy form provides characteristics superior to that in stack structure by retaining an amorphous structure up to 1000 degrees C, which suppresses the leakage current and retards the growth of interfacial layer giving rise to lower increment of equivalent-oxide-thickness and interface trap density. (c) 2007 The Electrochemical Society.
引用
收藏
页码：G99 / G102
页数：4
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