SWITCH-ON TRANSIENT OF SHALLOW-PROFILE BIPOLAR TRANSISTORS.

被引:0
|
作者
Tang, Denny Duan-Lee [1 ]
机构
[1] IBM, Thomas J. Watson Research Cent,, Yorktown Heights, NY, USA, IBM, Thomas J. Watson Research Cent, Yorktown Heights, NY, USA
关键词
D O I
暂无
中图分类号
学科分类号
摘要
8
引用
收藏
页码:2224 / 2226
相关论文
共 50 条
  • [41] USE OF AMORPHOUS AND MICROCRYSTALLINE SILICON FOR SILICON HETEROJUNCTION BIPOLAR TRANSISTORS.
    Symons, J.
    Ghannam, M.
    Nijs, J.
    van Ammel, A.
    de Schepper, P.
    Neugroschel, A.
    Mertens, R.
    Applied Physics A: Solids and Surfaces, 1986, A41 (04): : 291 - 295
  • [42] COMPARISON OF SWITCH-ON BEHAVIOR OF MOS-TRANSISTORS OF DIFFERENT TECHNOLOGIES
    BIERHENKE, H
    HERBST, H
    AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1977, 31 (01): : 37 - 39
  • [43] Switch-on voltage in disordered organic field-effect transistors
    Meijer, EJ
    Tanase, C
    Blom, PWM
    van Veenendaal, E
    Huisman, BH
    de Leeuw, DM
    Klapwijk, TM
    APPLIED PHYSICS LETTERS, 2002, 80 (20) : 3838 - 3840
  • [44] CHARACTERIZATION OF NON-OHMIC BEHAVIOR OF EMITTER CONTACTS OF BIPOLAR TRANSISTORS.
    Ricco, B.
    Stork, J.M.C.
    Arienzo, M.
    Electron device letters, 1984, EDL-5 (07): : 221 - 223
  • [45] PHYSICS, TECHNOLOGY, AND MODELING OF POLYSILICON EMITTER CONTACTS FOR VLSI BIPOLAR TRANSISTORS.
    Patton, Gary L.
    Bravman, John C.
    Plummer, James D.
    IEEE Transactions on Electron Devices, 1986, ED-33 (11) : 1754 - 1768
  • [46] MEASUREMENT OF THE LOW-CURRENT BASE AND EMITTER RESISTANCES OF BIPOLAR TRANSISTORS.
    Neugroschel, Arnost
    IEEE Transactions on Electron Devices, 1987, ED-34 (04) : 817 - 822
  • [47] 20-GHZ FREQUENCY DIVIDER IMPLEMENTED WITH HETEROJUNCTION BIPOLAR TRANSISTORS.
    Wang, K.C.
    Asbeck, Peter M.
    Chang, M.F.
    Sullivan, G.J.
    Miller, D.L.
    Electron device letters, 1987, EDL-8 (09): : 383 - 385
  • [48] Impact of the Emitter Stored Charge on RF Noise of Junction Bipolar Transistors.
    Vitale, Francesco
    van der Toorn, Ramses
    2012 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2012,
  • [49] COMPREHENSIVE ANALYTICAL AND NUMERICAL MODEL OF POLYSILICON EMITTER CONTACTS IN BIPOLAR TRANSISTORS.
    Yu, Zhiping
    Ricco, Bruno
    Dutton, Robert W.
    IEEE Transactions on Electron Devices, 1984, ED-31 (06) : 773 - 784
  • [50] FUNDAMENTALS OF FORMAL SCHEMATIC SYNTHESIS OF DIGITAL MICROCIRCUITS BASED ON BIPOLAR TRANSISTORS.
    Shagurin, I.I.
    Soviet Microelectronics (English Translation of Mikroelektronika), 1979, 8 (02): : 80 - 94