SWITCH-ON TRANSIENT OF SHALLOW-PROFILE BIPOLAR TRANSISTORS.

被引：0
|
作者：
Tang, Denny Duan-Lee [1 ]
机构：
[1] IBM, Thomas J. Watson Research Cent,, Yorktown Heights, NY, USA, IBM, Thomas J. Watson Research Cent, Yorktown Heights, NY, USA
来源：
IEEE Transactions on Electron Devices | 1985年 / ED-32卷 / 11期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
8
引用
收藏
页码：2224 / 2226
相关论文
共 50 条
  • [31] TEMPERATURE DISTRIBUTION AND SAFE OPERATING AREA FOR BIPOLAR TRANSISTORS.
    Zeng Qingming
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1985, 6 (06): : 611 - 619
  • [32] Transient switch-on/off currents in molecular junctions
    Petrov, E. G.
    Shevchenko, Ye. V.
    May, V.
    Haenggi, P.
    JOURNAL OF CHEMICAL PHYSICS, 2011, 134 (20):
  • [33] Investigation of Nonlinearity in High-Frequency Bipolar Transistors.
    Gaudel, H.
    Lagorsse, J.M.
    Onde Electrique, 1975, 55 (08): : 428 - 436
  • [34] Method to Determine the SPICE-Parameters for Bipolar Transistors.
    Sischka, Franz
    AEU. Archiv fur Elektronik und Ubertragungstechnik, 1985, 39 (04): : 225 - 232
  • [35] Switch-on undershoot current observed in thin film transistors
    Yan, F.
    Migliorato, P.
    Rana, V.
    Ishihara, R.
    IDMC 05: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2005, 2005, : 456 - 458
  • [36] SWITCH-OFF TRANSIENT ANALYSIS FOR HETEROJUNCTION BIPOLAR-TRANSISTORS IN SATURATION
    YUAN, JS
    SOLID-STATE ELECTRONICS, 1993, 36 (09) : 1261 - 1266
  • [37] OPTIMIZED EXTRACTION OF ALTERNATING CURRENT MODEL PARAMETERS OF THE BIPOLAR TRANSISTORS.
    Xia, Wuying
    Zheng, Ying
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1985, 6 (04): : 369 - 378
  • [38] COMPARISON OF EXPERIMENTAL AND THEORETICAL RESULTS ON POLYSILICON EMITTER BIPOLAR TRANSISTORS.
    Ashburn, Peter
    Soerowirdjo, B.
    IEEE Transactions on Electron Devices, 1984, ED-31 (07) : 853 - 860
  • [39] TUNNELING COMPONENT IN POLYSILICON SELF-ALIGNED BIPOLAR TRANSISTORS.
    Hackbarth, E.
    Li, G.P.
    Chen, T.C.
    IEEE Transactions on Electron Devices, 1986, ED-33 (11)
  • [40] EXPLOIT VMOS FETs' ADVANTAGES TO DRIVE BIPOLAR POWER TRANSISTORS.
    Barlage, F.Michael
    EDN, 1979, 23 (20) : 93 - 96
12345