PHYSICS, TECHNOLOGY, AND MODELING OF POLYSILICON EMITTER CONTACTS FOR VLSI BIPOLAR TRANSISTORS.

被引：0

作者：

Patton, Gary L. ^{[1
]}

Bravman, John C. ^{[1
]}

Plummer, James D. ^{[1
]}

机构：

[1] Stanford Univ, CA, USA, Stanford Univ, CA, USA

来源：

IEEE Transactions on Electron Devices | 1986年 / ED-33卷 / 11期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

TRANSISTORS, BIPOLAR

引用

页码：1754 / 1768

共 50 条

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