COMPUTER MODELLING OF POLYSILICON-CONTACTED EMITTER BIPOLAR TRANSISTORS FOR VLSI CIRCUITS.

被引:0
|
作者
Bradley, Susan M. [1 ]
Doherty, J.G. [1 ]
机构
[1] Queen's Univ of Belfast, N. Irel, Queen's Univ of Belfast, N. Irel
关键词
D O I
暂无
中图分类号
学科分类号
摘要
11
引用
下载
收藏
页码:5 / 14
相关论文
共 50 条
  • [1] Polysilicon-contacted thin emitter thyristors
    Jingping, Xu
    Yuehui, Yu
    Shaolian, Peng
    Tao, Chen
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (08): : 3403 - 3408
  • [2] POLYSILICON-CONTACTED THIN EMITTER THYRISTORS
    XU, JP
    YU, YH
    PENG, SL
    CHEN, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (08): : 3403 - 3408
  • [3] EXPERIMENTAL-VERIFICATION OF THE EXTENDED-EMITTER CONCEPT FOR PHOSPHORUS-IMPLANTED SELF-ALIGNED POLYSILICON-CONTACTED BIPOLAR-TRANSISTORS
    BURK, DE
    YUNG, SY
    SOLID-STATE ELECTRONICS, 1988, 31 (07) : 1127 - 1138
  • [4] A COMPARISON OF DIFFERENT DEPOSITION TECHNIQUES FOR FABRICATING POLYSILICON CONTACTED EMITTER BIPOLAR-TRANSISTORS
    BAGRI, R
    NEUDECK, G
    KLAASEN, W
    PAK, J
    LOGSDON, J
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (05): : 1537 - 1541
  • [5] PHYSICS, TECHNOLOGY, AND MODELING OF POLYSILICON EMITTER CONTACTS FOR VLSI BIPOLAR TRANSISTORS.
    Patton, Gary L.
    Bravman, John C.
    Plummer, James D.
    IEEE Transactions on Electron Devices, 1986, ED-33 (11) : 1754 - 1768
  • [6] PHYSICS, TECHNOLOGY, AND MODELING OF POLYSILICON EMITTER CONTACTS FOR VLSI BIPOLAR-TRANSISTORS
    PATTON, GL
    BRAVMAN, JC
    PLUMMER, JD
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1754 - 1768
  • [7] On the modeling of polysilicon emitter bipolar transistors
    Rinaldi, NF
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (03) : 395 - 403
  • [8] Modelling of gain control in SiGeHBTs and Si bipolar transistors by Ge incorporation in the polysilicon emitter
    Kunz, VD
    de Groot, CH
    Anteney, IM
    Abdul-Rahim, AI
    Hall, S
    Hemment, PLF
    Wang, Y
    Ashburn, P
    NANOTECH 2003, VOL 2, 2003, : 16 - 19
  • [9] LIGHTLY DOPED DRAIN TRANSISTORS FOR ADVANCED VLSI CIRCUITS.
    Baglee, David A.
    Duvvury, Charvaka
    Smayling, Michael C.
    Duane, Michael P.
    IEEE Transactions on Electron Devices, 1985, ED-32 (05) : 896 - 902
  • [10] Design and characteristics of polysilicon emitter bipolar junction transistors
    Shih, NF
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (10B): : L1238 - L1240