Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors

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机构：
[1] Yang, Y.F.
[2] Hsu, C.C.
[3] Yang, E.S.
来源：
Yang, Y.F. | 1600年 / 41期
关键词：
Current gain - Emitter size effect - Heterostructure-emitter bipolar transistors - Passivation layer - Surface recombination current;
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