共 50 条
- [31] Electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on porous SiC substrateJOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (05) : 456 - 459Fang, ZQLook, DCChandrasekaran, RRao, SSaddow, SE
- [32] Buffer free direct growth of GaN on 6H-SiC by metalorganic vapor phase epitaxyJOURNAL OF APPLIED PHYSICS, 2000, 87 (01) : 577 - 583Lahrèche, HLeroux, MLaügt, MVaille, MBeaumont, BGibart, P
- [33] Low temperature ferromagnetism of GaMnN grown on 6H-SiC (0001) by molecular beam epitaxyCOMMAD 04: 2004 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 2005, : 49 - 52Cai, XMDjurisic, ABXie, MHLiu, HZhang, XX
- [34] (ALGA) AS GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY USING A N2 CARRIERJOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (10) : 1061 - 1065HOLLFELDER, MHARDTDEGEN, HMEYER, RCARIUS, RLUTH, H
- [35] COMPOSITION PROFILE OF AN ALGAAS EPILAYER ON A V-GROOVED SUBSTRATE GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXYAPPLIED PHYSICS LETTERS, 1995, 67 (07) : 959 - 961PAN, WGYAGUCHI, HONABE, KITO, RSHIRAKI, Y
- [36] Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxyJOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (04) : 292 - 295Rendakova, SVNikitina, IPTregubova, ASDmitriev, VA
- [37] Hexagonal boron nitride film on sapphire substrate grown by low-pressure and high-temperature halide vapor phase epitaxyJOURNAL OF CRYSTAL GROWTH, 2022, 588Liu, TingLi, XuZhao, JianyunZhang, QianLu, YongXu, JiTan, ShuxinZhang, Jicai
- [38] Hexagonal boron nitride film on sapphire substrate grown by low-pressure and high-temperature halide vapor phase epitaxyJournal of Crystal Growth, 2022, 588Liu, TingLi, XuZhao, JianyunZhang, QianLu, YongXu, JiTan, ShuxinZhang, Jicai
- [39] Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxyJournal of Electronic Materials, 1998, 27 : 292 - 295S. V. RendakovaI. P. NikitinaA. S. TregubovaV. A. Dmitriev
- [40] PHOTOLUMINESCENCE OF ZNTE HOMOEPITAXIAL LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AT LOW-PRESSUREJOURNAL OF APPLIED PHYSICS, 1989, 66 (08) : 3919 - 3921OGAWA, HNISHIO, M