InGaN laser diode grown on 6H-SiC substrate using low-pressure metallorganic vapor phase epitaxy

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作者：
Kuramata, Akito [1 ]
Domen, Kay [1 ]
Soejima, Reiko [1 ]
Horino, Kazuhiko [1 ]
Kubota, Shin-ichi [1 ]
Tanahashi, Toshiyuki [1 ]
机构：
[1] Fujitsu Lab Ltd, Atsugi, Japan
来源：
Journal of Crystal Growth | / 189-190卷
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页码：826 / 830
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