Violet light emission from GaN/Al0.05Ga0.95N injection diode grown on 6H-SiC substrate by low-pressure MO-VPE

被引：0
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作者：
Kuga, Y
Shirai, T
Haruyama, M
Kawanishi, H
Suematsu, Y
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来源：
SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaN/AlGaN double heterostructure (DH) injection diode was grown on (0001) oriented n-type 6H-SiC substrate by low-pressure metalorganic vapor phase epitaxy (LP MO-VPE). Violet light emission at 420nm was experimentally demonstrated at room temperature under DC-biased operation. Full width at half-maximum (FWHM) of the violet emission was 28 nm, this time, at current density of 64 A/cm(2).
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页码：999 / 1002
页数：4
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