Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy

被引：0

作者：

S. V. Rendakova

I. P. Nikitina

A. S. Tregubova

V. A. Dmitriev

机构：

[1] Crystal Growth Research Center,

[2] A.F. Ioffe Institute,undefined

[3] MSRCE,undefined

[4] Howard University,undefined

[5] TDI,undefined

[6] Inc.,undefined

来源：

Journal of Electronic Materials | 1998年 / 27卷

关键词：

Dislocations; liquid phase epitaxy; micropipes; silicon carbide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We investigated silicon carbide (SiC) epitaxial layers grown by liquid phase epitaxy (LPE). The layers were grown on 6H-SiC and 4H-SiC well-oriented (0001) 35 mm diameter commercial wafers as well as on 6H-SiC Lely crystals. A few experiments were also done on off-axis 6H-SiC and 4H-SiC substrates. Layer thickness and growth rate ranged from 0.5 to 50 microns and 0.5 to 10 µm/h, respectively. Layers were investigated by x-ray diffraction, x-ray topography, and selective chemical etching in molten KOH. It was found that dislocation and micropipe density in LPE grown epitaxial layers were significantly reduced compared with the defect densities in the substrates.

引用

页码：292 / 295

页数：3

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