Self-interstitial related reactions in silicon irradiated by light ions

被引：0
|
作者：
Mukashev, B.N. [1 ]
Abdullin, Kh.A. [1 ]
Gorelkinskii, Yu.V. [1 ]
Tokmoldin, S.Zh. [1 ]
机构：
[1] Institute of Physics and Technology, Ministry of Science, Academy of Sciences of the Republic Kazakhstan, 480082 Almaty, Kazakhstan
来源：
Materials Science and Engineering B: Solid-State Materials for Advanced Technology | / 58卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：171 / 178
相关论文
共 50 条
  • [31] SILICON SELF-INTERSTITIAL SUPERSATURATION DURING PHOSPHORUS DIFFUSION
    HARRIS, RM
    ANTONIADIS, DA
    APPLIED PHYSICS LETTERS, 1983, 43 (10) : 937 - 939
  • [32] Copper interactions with H, O, and the self-interstitial in silicon
    West, D
    Estreicher, SK
    Knack, S
    Weber, J
    PHYSICAL REVIEW B, 2003, 68 (03)
  • [33] Mechanism and energetics of self-interstitial formation and diffusion in silicon
    Vaidyanathan, Ramakrishnan
    Jung, Michael Y. L.
    Seebauer, Edmund G.
    PHYSICAL REVIEW B, 2007, 75 (19)
  • [34] Self-interstitial diffusion and clustering with impurities in crystalline silicon
    Mirabella, S
    De Salvador, D
    Napolitani, E
    Giannazzo, F
    Impellizzeri, G
    Bisognin, G
    Terrasi, A
    Raineri, V
    Berti, M
    Carnera, A
    Drigo, AV
    Priolo, F
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 216 : 80 - 89
  • [35] Silicon self-interstitial cluster formation and dissolution in SOI
    Saavedra, A
    Frazer, J
    Wrigley, D
    Jones, K
    Avci, I
    Earles, S
    Law, M
    Jones, E
    SILICON FRONT-END JUNCTION FORMATION TECHNOLOGIES, 2002, 717 : 95 - 100
  • [36] Hydrogen-saturated self-interstitial in silicon and germanium
    Budde, M.
    Nielsen, B.Bech
    Leary, P.
    Goss, J.
    Jones, R.
    Briddon, P.R.
    Oberg, S.
    Breuer, S.J.
    1997, Trans Tech Publ Ltd, Uetikon-Zuerich, Switzerland (258-263)
  • [37] Self-interstitial trapping by carbon complexes in crystalline silicon
    Mattoni, A
    Bernardini, F
    Colombo, L
    PHYSICAL REVIEW B, 2002, 66 (19): : 1 - 6
  • [38] The hydrogen-saturated self-interstitial in silicon and germanium
    Budde, M
    Nielsen, BB
    Leary, P
    Goss, J
    Jones, R
    Briddon, PR
    Oberg, S
    Breuer, SJ
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 35 - 40
  • [39] Complexes of the self-interstitial with oxygen in irradiated silicon:: a new assignment of the 936 cm-1 band
    Hermansson, J
    Murin, LI
    Hallberg, T
    Markevich, VP
    Lindström, JL
    Kleverman, M
    Svensson, BG
    PHYSICA B-CONDENSED MATTER, 2001, 302 : 188 - 192
  • [40] Concentration dependence of self-interstitial and boron diffusion in silicon
    Windl, Wolfgang
    APPLIED PHYSICS LETTERS, 2008, 92 (20)
12345