Mechanism and energetics of self-interstitial formation and diffusion in silicon

被引：12

作者：

Vaidyanathan, Ramakrishnan ^{[1
]}

Jung, Michael Y. L. ^{[1
]}

Seebauer, Edmund G. ^{[1
]}

机构：

[1] Univ Illinois, Dept Chem & Biomol Engn, Urbana, IL 61801 USA

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.75.195209

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent work has suggested that prior determinations of diffusion mechanism and point defect thermodynamics in silicon have been affected by nonequilibrium effects stemming from uncontrolled adsorption-induced suppression of a pathway for defect creation at the surface. Through silicon self-diffusion measurements in ultrahigh vacuum in a short-time kinetic limit, the present work shows unambiguously that interstitials are the primary mediators of self-diffusion over the range 650-1000 degrees C, moving over distances of 5-9 nm before exchanging into the lattice. The Frank-Turnbull mechanism of interstitial formation does not play a significant role.

引用

页数：5

共 50 条

[1] Diffusion of self-interstitial atoms in silicon
Vaysleyb, AV
Malinsky, J
PHYSICS LETTERS A, 1996, 216 (1-5) : 157 - 160
[2] NATURE AND DIFFUSION OF THE SELF-INTERSTITIAL IN SILICON
MASRI, P
HARKER, AH
STONEHAM, AM
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (18): : L613 - L616
[3] First-principles study of the self-interstitial diffusion mechanism in silicon
Lee, WC
Lee, SG
Chang, KJ
JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (05) : 995 - 1002
[4] SELF-INTERSTITIAL ENHANCED CARBON DIFFUSION IN SILICON
KALEJS, JP
LADD, LA
GOSELE, U
APPLIED PHYSICS LETTERS, 1984, 45 (03) : 268 - 269
[5] Dynamics of self-interstitial cluster formation in silicon
Chichkine, MP
De Souza, MM
PHYSICAL REVIEW B, 2002, 66 (04):
[6] SILICON SELF-INTERSTITIAL SUPERSATURATION DURING PHOSPHORUS DIFFUSION
HARRIS, RM
ANTONIADIS, DA
APPLIED PHYSICS LETTERS, 1983, 43 (10) : 937 - 939
[7] Self-interstitial diffusion and clustering with impurities in crystalline silicon
Mirabella, S
De Salvador, D
Napolitani, E
Giannazzo, F
Impellizzeri, G
Bisognin, G
Terrasi, A
Raineri, V
Berti, M
Carnera, A
Drigo, AV
Priolo, F
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 216 : 80 - 89
[8] Concentration dependence of self-interstitial and boron diffusion in silicon
Windl, Wolfgang
APPLIED PHYSICS LETTERS, 2008, 92 (20)
[9] Structure, energetics, and extrinsic levels of small self-interstitial clusters in silicon
Lopez, GM
Fiorentini, V
PHYSICAL REVIEW B, 2004, 69 (15): : 155206 - 1
[10] Energetics of self-interstitial clusters in Si
Cowern, NEB
Mannino, G
Stolk, PA
Roozeboom, F
Huizing, HGA
van Berkum, JGM
Cristiano, F
Claverie, A
Jaraíz, M
PHYSICAL REVIEW LETTERS, 1999, 82 (22) : 4460 - 4463

← 1 2 3 4 5 →